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STW3100
TRANSCEIVER MODULE
REV. 1.0 - PRODUCT PREVIEW
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FEATURES Triple-band (EGSM900 / DCS1800 / PCS1900). Supports data transfer applications in multislots GPRS class-12 EDGE Receive capability Integrates: - BiCMOS6G RF transceiver - 3 Receive Band Pass filters - 3 Receive Matching Network between filters output & LNA input - PLL loop filter - Decoupling / DC blocking capacitors
LFBGA104 (7x7x1.4mm) ORDERING NUMBER: STW3100
Insures compatibility with different Power Modules - STW3102 Power Module - Power Module coming from the competition RF interfaces: - Single-ended 50 ohms acceses - 3 in Rx - 2 in Tx
- 2 kV Human Body Model
Control interfaces: - Towards Baseband: 3-wire serial interface with a Clock (Clk), enable (En) and a data line (Data). - Towards Front-End functions 3 control pins
Noise Figure in - Low band : 5.5 dB typ - Hign bands : 6 dB typ Transmit output level: - EGSM band : 1 or 5 dBm typ - DCS & PCS bands : 1 or 5 dBm typ Standard Rx / Tx differential I/Q analogue interface Supply voltage range: 2.7V min / 3.3V max Embedded voltage regulators to supply on chip RF functions Package: - Full lead-free - 104 -BGA 7 x 7 pack Temperature range: - Case operating temperature range: -20/ +70C (fulfil specification) ESD handling:

2 DESCRIPTION In a 1.4 x 7 x 7mm low-profile Ball Grid Array package, the new modules integrate all of the key functions, requiring only a 26MHz crystal and a power amplifier module (PA+antenna switch functions) to build a complete triple-band solution from antenna to base band interface. Two versions are offered: type STW3100 addresses the European EGSM900, DCS1800, and PCS1900 bands while the STw3101 targets the US GSM850, DCS1800, and PCS1900 bands. The transceiver modules are compatible with the STMicroelectronics STw3102 power-amplifier module and most of the standard power amplifiers available on the market.
February 2004
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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3 ELECTRICAL CHARACTERISTICS
3.1 DC SECTION Limiting value
Symbol VCC Tstg Pdiss Top VCC Parameter Maximum voltage supply Storage Temperature Maximum Power dissipation Operating Temperature Supply voltage on Vcc_SYN and Vcc_RX/TX pins Operating Temperature Supply voltage on Vcc_SYN and Vcc_RX/TX pins -40 2.7 25 -55 25 Test Condition Min. Typ. Max. 3.6 125 500 85 3.3 Unit V C mW C V Absolute Maximum Ratings
Operating Functionality range
Operating Specified range Top VCC -20 2.7 25 70 3.3 C V
DC characteristics VCC = 2.7V;
Symbol Pin Vcc_syn Icc Icc Icc Icc Icc Icc Icc Supply current in power off mode Supply current in REF mode Supply in Syn mode Supply current in power off mode Supply current in RX mode Supply current in TX mode GSM bands Supply current in TX mode DCS or PCS bands Internal regulated supply voltage Internal regulated supply voltage Internal regulated supply voltage 10 3 35 10 35 88 88 A mA mA A mA mA mA Parameter Test Condition Min. Typ. Max. Unit
Pin Vcc_RX/TX
Pin Vccreg_RFVCO Vccreg Vccreg Vccreg 2 2 1.8 V V V Pin Vccreg_TXVCO Pin Vccreg_Digital
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3.2 Receive Section Vcc = 2.7V;
Symbol fRX2 fRX3 fRX4 Zin VSWR_in Ripple Gmax G Input impedance Input VSWR into 50 ohm Gain Flatness over the Frf band Total max gain Gain range AGC gain step AGC linearity NF ICP-1dB IIP3 IIP2 C/N Noise figure DSB 1dB Input Compression Point @ Low gain, 0kHz offset Third Order Input Intercept Point @ High Front-end gain 2nd Order Input Intercept Point Low Band High Band Low Band High Band Low Band High Band High Front-end gain -23 -26 -14 -14 +44 9 -1 5.5 6 -20 -23 -10 -12 dBm dB dBm dBm in 2Vpp Mode in 4Vpp Mode 74 80 66 3 +1 dB dB Parameter Input Frequency Test Condition EGSM900 GSM1800 GSM1900 Single-Ended Min. 925 1805 1930 50 1.8 1 2.3 2 79 85 dB dB dB Typ. Max. 960 1880 1990 Unit MHz
Out-of-band Blocking (a, b, c, d) Pwanted= -100 dBm, in Low-Band & (a , d) in High- Pinterf= -1 dBm Band (1 dB Insertion Losses for antenna switch) Out-of-band Blocking (c, b) in High-Band In-Band Blocking @ |F-Fo|> 3 MHz In-Band Blocking @ 1.6 MHz < |F-Fo| < 3 MHz In-Band Blocking @ 600 kHz < |F-Fo| < 1.6 MHz Pwanted= -100 dBm, Pinterf= -13 dBm Pwanted= -100 dBm, Pinterf= -24 dBm (LB) Pinterf= -27 dBm (HB) Pwanted= -100 dBm, Pinterf= -34 dBm Pwanted= -100 dBm, Pinterf= -44 dBm after calibration
C/N C/N
9 9
dB dB
C/N C/N
9 9 90 110 15 50 58 4 45 52 18 51 62 110 140
dB dB kHz dB
BW_GMSK 3 dB Channel bandwidth BW_EDGE Att GMSK Mode Channel response attenuation @ 200 kHz @ 400 kHz @ 600 kHz Channel response attenuation @ 200 kHz @ 400 kHz @ 600 kHz Group delay variation Spurious emission @ RF input @ 9 kHz -1 GHz @ 1 GHz - 12 75 GHz
Att EDGE Mode
dB 7 48 55 1.8 2.5 -57 -47 us dBm
Tdelay Spurs
Between 0 & 67.7 kHz
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3.2 Receive Section (continued) Vcc = 2.7V;
Symbol GIQ IQ VCm VSwing Voffset Toffset Parameter I & Q Gain mismatch I & Q quadrature mismatch Output Common mode voltage Maximum single ended Output Voltage Differential Output OffsetVoltage Offset voltage calibration settling time (during the locking time phase) 4Vpp mode 2Vpp mode after calibration Test Condition Min. -1 -5 1.2 0.75 0.375 -150 20 +150 200 1.35 Typ. Max. +1 +5 1.5 Unit dB deg V Vpk mV us
3.3 Transmit Section Vcc = 2.7V;
Symbol Fmod VDC mod Vmod VDC offset RIN CIN Parameter Modulation frequency range Input Common mode voltage Modulation level Input DC offset permissible Dynamic input resistance Dynamic input capacitance Single ended; peak to peak value Differential Single ended Single ended differential RF Tx performances fTX2 fTX3 fTX4 Zout VSWR_out Output impedance Output VSWR into 50 ohm Set to Pout _0 Set to Pout _1 ACPR400 N20MHz RMS H2LB H3LB IMout Crej ACPR @ 400 kHz offset (BW = 30 kHz) Output Phase Noise @ 20 MHz offset RMS phase error 2nd 3rd Harmonic level Harmonic level -45 -40 Low Band High Band Low Band High Band Output frequency EGSM900 GSM1800 GSM1900 Single-Ended 880 1710 1850 50 1.5 +1 +5 -65 -63 -164 -156 1.2 -62 -61 -159 -152 2.5 -20 -20 -35 -32 dBc/ BW dBc/ Hz deg dBc dBc dBc dBc 2 dBm 915 1785 1910 MHz 10 Test Condition 3dB low pass cut-off frequency Min. 1 0.8 0.8 Typ. 1 1 Max. 1.4 1.2 10 20 56 Unit MHz V Vpp mV k pF Pins ITX(+), ITX(-), QTX(+) and QTX(-)
POUTGMSK Output power into 50 ohm load
Unwanted sideband suppression Carrier rejection
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3.4 Frequency generation Section Vcc = 2.7V;
Symbol RF synthesizer Tlock_time Settling Time EGSM900 Frequency Range DCS1800 Frequency Range DCS1900 Frequency Range Fchannnel Fstep DCXO Fref Reference Frequency (quartz input) -30 1 Capacitor bank step 26 +30 MHz ppm ppm Channel spacing Synthesizer frequency step (Fract-N PLL) peak < 20 880.2 1710.2 1850.2 200 0.0022 150 200 959.8 1879.8 1989.8 us MHz MHz MHz kHz ppm Parameter Test Condition Min. Typ. Max. Unit
Frange crystal Capacitor bank frequency range Fstep crystal
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mm DIM. MIN. A A1 A2 b D D1 E E1 e F ddd eee fff 6.85 0.25 6.85 1.21 0.15 1.02 0.30 7.00 5.50 7.00 5.50 0.50 0.75 0.08 0.15 0.05 7.15 0.270 0.35 7.15 0.010 0.270 TYP. MAX. MIN. 0.048 0.006
inch TYP. MAX.
OUTLINE AND MECHANICAL DATA
0.040 0.012 0.275 0.216 0.275 0.216 0.020 0.281 0.014 0.281
Body: 7 x 7 x 1.4mm
0.029 0.003 0.006 0.002
LFBGA104 Low Fine Ball Grid Array
7578709 A
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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